A study of dissolution characteristics and acid diffusion in chemically amplified DUV resist

Microelectronic Engineering

Volumn 41-42, Issue , 1998, Pages 363-366

  Itani, T ^a   Hashimoto, S ^a   Yamana, M ^a   Samoto, N ^a   Kasama, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACIDS; DIFFUSION; DISSOLUTION; LITHOGRAPHY; PERFORMANCE;

CHEMICALLY AMPLIFIED DUV RESIST;

PHOTORESISTS;

EID: 0031656332     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(98)00084-7     Document Type: Article

References (6)

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3. M.Yamana, T.Itani, H.Yoshino, S.Hashimoto, N.Samoto and K.Kasama, Proc. SPIE 3049, 269 (1997).
4. T.Itani, H.Yoshino, S.Hashimoto, M.Yamana, N. Samoto and K.Kasama, Jpn.J.Appl.Phys. 35, 6501 (1996).
5. J.Nakamura, H.Ban, K.Deguchi and A.Tanaka, Jpn. J. Appl. Phys. 30, 2619 (1991).
6. D.R.McKean, R.D.Allen, P.H.Kasai, U.Schaedeli and S.A.MacDonald, Proc. SPIE, 1672, 94 (1992).