Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment

IEEE Electron Device Letters

Volumn 21, Issue 8, 2000, Pages 378-380

  Pan, Tung Ming ^a   Lei, Tan Fu ^a   Chao, Tien Sheng ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; NITROGEN COMPOUNDS; PERMITTIVITY; PROM; RAPID THERMAL ANNEALING; ULTRATHIN FILMS;

ELECTRONIC ERASEABLE PROGRAMMABLE READ ONLY MEMORY (EEPROM); FLASH MEMORY;

DIELECTRIC FILMS;

EID: 0034249581     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.852956     Document Type: Article

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