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Volumn 80, Issue 9, 1996, Pages 5325-5331

Ultra-low values of the absorption coefficient for band-band transitions in moderately doped Si obtained from luminescence

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Indexed keywords


EID: 0013275844     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363471     Document Type: Article
Times cited : (22)

References (38)
  • 5
    • 85033836767 scopus 로고    scopus 로고
    • note
    • i can be found in Ref. 7.
  • 9
    • 85033833524 scopus 로고    scopus 로고
    • note
    • This follows from a one-dimensional calculation of the carrier distribution, see for example Ref. 18.
  • 17
    • 0004260623 scopus 로고
    • The University of New South Wales, Kensington
    • M. Green, Solar Cells (The University of New South Wales, Kensington, 1992).
    • (1992) Solar Cells
    • Green, M.1
  • 23
    • 85033857170 scopus 로고
    • Ph.D. thesis, University of Karlsruhe, Germany
    • E. Daub, Ph.D. thesis, University of Karlsruhe, Germany, 1995.
    • (1995)
    • Daub, E.1
  • 37
    • 85033854176 scopus 로고    scopus 로고
    • note
    • Corkish and Green (Ref. 36) wrongly attribute the temperature dependence of band-band transitions partly to a temperature dependence of the density-of -states effective masses. Especially for the holes, deviations from a simple parabolic band structure lead to an increase of the density-of-state effective mass with increasing temperature, due to the increasing hole population in the split-off band and the anisotropy and nonparabolicity of all three valence bands (Ref. 38). The absorption coefficient, however, is directly determined by the densities of states in the valence and conduction band, which are not expected to change with temperature. The respective correction factors given in Ref. 38 must be eliminated.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.