Locally delineating of junctions and defects by local cross-section electron-beam-induced-current technique

Microelectronics Reliability

Volumn 41, Issue 8, 2001, Pages 1243-1253

  Koyama, T ^a,b   Umeno, M ^a   Sonoda, K ^b   Komori, J ^b   Mashiko, Y ^b  

^a OSAKA UNIVERSITY   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; CRYSTAL DEFECTS; ELECTRODES; ELECTRON BEAMS; IMAGE ANALYSIS; IRRADIATION; OPTICAL RESOLVING POWER; ULSI CIRCUITS;

FOCUSSED ION BEAMS (FIB);

SEMICONDUCTOR JUNCTIONS;

EID: 0035416503     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00110-X     Document Type: Article

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