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Volumn 14, Issue 1, 1996, Pages 202-212

Practical perspective of shallow junction analysis

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0003729433     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589030     Document Type: Review
Times cited : (10)

References (47)
  • 1
    • 4243111395 scopus 로고
    • edited by A. Katz (Artech House, Boston)
    • Geva, in Indium Phosphide and Related Materials, edited by A. Katz (Artech House, Boston, 1991), pp. 45-73.
    • (1991) Indium Phosphide and Related Materials , pp. 45-73
    • Geva1
  • 2
    • 0011168068 scopus 로고
    • edited by S. Datz (Academic, New York)
    • Williams, in Applied Atomic Collision Physics, edited by S. Datz (Academic, New York, 1983), Vol. 4, pp. 327-377.
    • (1983) Applied Atomic Collision Physics , vol.4 , pp. 327-377
    • Williams1
  • 6
    • 0004066963 scopus 로고
    • edited by E. F. Schubert (Cambridge University Press, Cambridge)
    • Luftman, in Delta-Doping of Semiconductors, edited by E. F. Schubert (Cambridge University Press, Cambridge, 1995).
    • (1995) Delta-Doping of Semiconductors
    • Luftman1
  • 7
    • 4243081681 scopus 로고
    • edited by A. Benninghoven, K. T. F. Jenssen, J. Tumpner, and H. W. Werner (Wiley, New York)
    • Geva, in Secondary Ion Mass Spectrometry, SIMS VIII, edited by A. Benninghoven, K. T. F. Jenssen, J. Tumpner, and H. W. Werner (Wiley, New York, 1992), pp. 435-438.
    • (1992) Secondary Ion Mass Spectrometry, SIMS VIII , pp. 435-438
    • Geva1
  • 36
    • 0003679027 scopus 로고
    • McGraw-Hill, New York
    • VLSI Technology, edited by Sze (McGraw-Hill, New York, 1983).
    • (1983) VLSI Technology
    • Sze1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.