A Comparitive Study of Electron and Ion Beam Induced Charge Imaging Techniques in CMOS Failure Analysis

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn 1996-November, Issue , 1996, Pages 3-8

  Chan, D S H ^a   Kolachina, S ^a   Ong, V K S ^a   Phang, J C H ^a   Osipowicz, T ^a   Sanchez, J L ^a   Watt, F ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; FAILURE ANALYSIS; IMAGE ENHANCEMENT; IONS;

BEAM IONS; CURRENT IMAGE; CURRENT IMAGING; ELECTRON-BEAM-INDUCED CURRENT; INDUCED DEGRADATION; ION BEAM ENERGY; ION TYPES; ION-BEAM INDUCED CHARGE IMAGING; ION-BEAM INDUCED CHARGES; METAL LAYER;

ION BEAMS;

EID: 84902969967     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.31399/asm.cp.istfa1996p0003     Document Type: Conference Paper

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