Low Acceleration Voltage EBIC Using FESEM and Application to Cross-Sectional Junction Evaluation

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Volumn 1996-November, Issue , 1996, Pages 101-106

  Kadota, Y ^a   Mori, K ^a  

^a RICOH COMPANY LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS;

ACCELERATION VOLTAGES; DEPTH-PROFILE; ELECTRON BEAM INDUCED CURRENT METHODS; ELECTRON-BEAM CURRENT; ELECTRON-BEAM-INDUCED CURRENT; IMPURITY DENSITY; JUNCTION DEPTH; LOW-ACCELERATION-VOLTAGE ELECTRONS; MOSFETS; PRIMARY ELECTRON BEAMS;

ELECTRON BEAMS;

EID: 11544316563     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.31399/asm.cp.istfa1996p0101     Document Type: Conference Paper

References (6)

1. E.Errett, B.Wensik, M,Strizich, "EBIC Observations of Subsurface Damage," ISTFA1988
2. E.Hutchinson, "CMOS Characterization Using EBIC: Applications and Performance," ISTFA 1991
3. E.A Fitzgerald, HJ.Gossrnann, F.GUnterwakl, H.S.Luftman, D.Monroe, "EBIC Determination of Shallow Junction Depth," International Workshop on the Measurement and Characterization of Ultra-Shallow Doping Profiles in Semiconductors 1993
4. D.B.Holt, MD.Muir, P.R.Grant, IMBoswarva, "Quantitative Scanning Electron Microscopy" ACADEMIC PRESS ENC.1974
5. H.J.Leamy, "Charge Collection Scanning Microscopy," LAppLPhys. 53, R51(1982)
6. K.Mori, Y.Kadota "The Evaluation of LSI Junction by EBIC Method" rate news poster session in ICMTS' 96