Two-dimensional junction profiling by selective chemical etching: Applications to electron device characterization

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 1, 1996, Pages 414-420

  Spinella, C ^a   Raineri, V ^a   La Via, F ^a   Campisano, S U ^a  

^a CNR IMETEM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000487295     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588485     Document Type: Article

References (17)

1. C. Hill, Proceedings of the First International Workshop on the Measurements and Characterization of Ultra-Shallow Doping Profiles in Semiconductors, edited by C. Osburn and G. McGuire (American Vacuum Society, New York, 1991), Vol. I, pp. 3-12.
2. R. Subrahmayan, J. Vac. Sci. Technol. B 10, 358 (1992).
3. C. P. Wu, E. C. Douglas, C. W. Muller, and R. Williams, J. Electrochem. Soc. 126, 1982 (1979).
4. D. R. Turner, J. Electrochem. Soc. 107, 810 (1960).
5. M. C. Roberts, K. J. Yallup, and G. R. Booker, Microscopy of Semiconductor Materials, edited by A. G. Cullis and D. B. Holt, IOP Conf. Ser. 76 (IOP, Bristol, 1985) pp. 483-488.
6. D. P. Gold, J. H. Wills, G. R. Booker, M. C. Willson, and D. J. Godfrey, Microscopy of Semiconductor Materials, edited by A. G. Cullis and J. L. Hutchinson, IOP Conf. Ser. 100 (IOP, Bristol, 1989), pp. 537-542.
7. D. H. Maher and B. Zhang, J. Vac. Sci. Technol. B 12 347 (1994).
8. C. Spinella, V. Raineri, M. Saggio, V. Privitera, and S. U. Campisano, Nucl. Instrum. Methods B 96, 219 (1995).
9. C. Spinella, V. Raineri, and S. U. Campisano, J. Electrochem. Soc. 142, 1601 (1995).
10. R. Subrahmanyan and H. Z. Massoud, in Semiconductor Fabrication: Technology and Methology, edited by D. C. Gupta ASTM STP 990 (American Society for Testing and Materials, Philadelphia, PA, 1988).
11. L. Gong, J. Lorenz, and H. Ryssel, Proceeding of ESSDERC 90, edited by W. Eccleston and P. J. Rasser (Hilyer, Bristol, 1990), pp. 93-96.
12. V. Raineri, V. Privitera, W. Vanderworst, L. Hellemans, and J. Snauwaert, Appl. Phys. Lett. 64, 354 (1994).
13. R. Liu, D. S. Williams, and W. T. Lynch, J. Appl. Phys. 63, 1990 (1988).
14. F. La Via, C. Spinella, and E. Rimini, Appl. Surf. Sci. Technol. 73, 135 (1993).
15. Q. Wang, C. M. Osburn, and C. A. Canovai, IEEE Trans. Electron Devices 39, 2486 (1992).
16. C. L. Chu and K. C. Sarawat, IEEE Trans. Electron Devices 39, 2533 (1992)
17. O. Thomas, P. Gas, A. Charai, F. K. LeGones, A. Michel, G. Scilla, and F. M. d'Heurle, J. Appl. Phys. 64, 2973 (1988).