Selective dry etching using inductively coupled plasmas. Part II. InN/GaN and InN/AlN

Applied Surface Science

Volumn 147, Issue 1, 1999, Pages 134-139

  Hays, D C ^a   Cho, H ^a   Jung, K B ^a   Hahn, Y B ^a   Abernathy, C R ^a   Pearton, S J ^a   Ren, F ^a   Hun, J ^b   Shul, R J ^b  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRON DEVICE MANUFACTURE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

INDUCTIVELY COUPLED PLASMA; SELECTIVE ETCHING; SEMICONDUCTING ALUMINUM NITRIDE; SEMICONDUCTING GALLIUM NITRIDE; SEMICONDUCTING INDIUM NITRIDE;

PLASMA ETCHING;

EID: 0032650017     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00104-X     Document Type: Article

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