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Journal of Materials Research
Volumn 16, Issue 6, 2001, Pages 1814-1821
X-ray scattering study on the structural evolution of AlN/sapphire(0001) films during radiofrequency sputter growth
(3)
Kang, H C
a
Seo, S H
a
Noh, D Y
a
a
Gwangju Institute of Science and Technology (GIST)
(
South Korea
)
Author keywords
[No Author keywords available]
Indexed keywords
EPITAXIAL GROWTH; MORPHOLOGY; NUCLEATION; SAPPHIRE; SPUTTER DEPOSITION; STRAIN; SURFACES; X RAY SCATTERING;
RADIOFREQUENCY SPUTTER GROWTH;
SEMICONDUCTING FILMS;
EID
:
0035382250
PISSN
:
08842914
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1557/JMR.2001.0250
Document Type
:
Article
Times cited : (
23
)
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