Evolution of surface morphology and strain in low-temperature AlN grown by plasma-assisted molecular beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 3 B, 1998, Pages

  Shim, Kyu Hwan ^a   Myoung, Jaemin ^a   Gluschenkov, Oleg ^a   Kim, Kyekyoon ^a   Kim, Chinkyo ^a   Robinson, Ian K ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDES; PLASMA APPLICATIONS; RESIDUAL STRESSES; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; STRAIN; STRESS RELAXATION; SURFACE ROUGHNESS;

ALUMINUM NITRIDE; LATTICE MISMATCH;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032022949     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l313     Document Type: Article

References (18)