Long-range behavior of the layer-by-layer growth in Si/Si(111)-7×7 homoepitaxy

Physical Review B - Condensed Matter and Materials Physics

Volumn 56, Issue 12, 1997, Pages R7080-R7083

  Noh, D ^a   Hwu, Y ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000182846     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.R7080     Document Type: Article

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