Oxide thickness dependence of hole trap generation in MOS structures under high-field electron injection

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 161-164

  Brozek, Tomasz ^a,b   Lum, Eric B ^a   Viswanathan, Chand R ^a  

^a University of California   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRON TUNNELING; GATES (TRANSISTOR); INTERFACES (MATERIALS); OXIDES; ELECTRONS; KINETIC THEORY; MOSFET DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR STORAGE;

HIGH FIELD ELECTRON INJECTION; HOLE TRAPPING; HOLE TRAP GENERATION; OXIDE THICKNESS DEPENDENCE;

MOS DEVICES;

EID: 0031150235     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00040-3     Document Type: Article

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