Bound vacancy interstitial pairs in irradiated silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 27-31

  Zillgen, H ^a   Ehrhart, P ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRONS; ENERGY GAP; IONIZATION OF SOLIDS; LATTICE CONSTANTS; POINT DEFECTS; RADIATION EFFECTS; X RAY CRYSTALLOGRAPHY;

BOUND VACANCY INTERSTITIAL PAIRS; ELECTRON IRRADIATION; FRENKEL DEFECTS;

SILICON WAFERS;

EID: 0041176250     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00851-8     Document Type: Article

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