Mechanisms in the ion beam synthesis of SiC layers in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 528-533

  Lindner, J K N ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Amorphization; Ballistic effects; Ion beam synthesis; Precipitates; SiC; Silicon

Indexed keywords

AMORPHIZATION; ANNEALING; COMPUTER SIMULATION; ION IMPLANTATION; MONTE CARLO METHODS; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

ION BEAM SYNTHESIS;

SEMICONDUCTING FILMS;

EID: 0033513671     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00787-3     Document Type: Article

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