Self-structuring of buried SiO2 precipitate layers during IBS: A computer simulation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 112, Issue 1-4, 1996, Pages 223-227

  Reiss, Stefan ^a   Heinig, Karl Heinz ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; INTERFACES (MATERIALS); ION BEAM LITHOGRAPHY; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SILICON WAFERS; SYNTHESIS (CHEMICAL);

ION BEAM SYNTHESIS; OSTWALD RIPENING; PRECIPITATE ENSEMBLES; SPATIAL SELF STRUCTURING;

ION IMPLANTATION;

EID: 0030563243     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)01238-9     Document Type: Article

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