Ion beam induced crystallization effect and growth kinetics of buried SiC layers formed by carbon implantation into silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 589-593

  Chen, Dihu ^a   Cheung, W Y ^a   Wong, S P ^a  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Implantation; Infrared absorption; Phase transformation; SiC

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; CARBON; CRYSTALLIZATION; ION BEAMS; ION IMPLANTATION; NITROGEN; NUCLEATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

DUAL-ENERGY IMPLANTATION;

SEMICONDUCTING FILMS;

EID: 0033513858     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00669-7     Document Type: Article

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