MeV ion beam synthesis of well-defined buried 3C-SiC layers in silicon

Materials Research Society Symposium - Proceedings

Volumn 396, Issue , 1996, Pages 877-882

  Lindner, J K N ^a   Goetz, B ^a   Frohnwieser, A ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; CURRENT DENSITY; ELECTRON DIFFRACTION; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SILICON CARBIDE; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRYSTALLINE CARBIDE PRECIPITATES; ION BEAM SYNTHESIS; POST IMPLANTATION ANNEAL; SILICON CARBIDE LAYERS; WELL DEFINED LAYERS;

SEMICONDUCTING FILMS;

EID: 0029707695     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)