Effect of oxygen on ion-beam induced synthesis of SiC in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 256-260

  Artamonov, V V ^a   Valakh, M Ya ^a   Klyui, N I ^a   Melnik, V P ^a   Romanyuk, A B ^a   Romanyuk, B N ^a   Yuhimchuk, V A ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

Ion implantation; Oxygen; Silicon carbide

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CARBON; GRAIN BOUNDARIES; INFRARED SPECTROSCOPY; OXYGEN; RAMAN SPECTROSCOPY; SILICON CARBIDE; SILICON WAFERS; SYNTHESIS (CHEMICAL);

HIGH TEMPERATURE ANNEALING; ION BEAM INDUCED SYNTHESIS;

ION IMPLANTATION;

EID: 0032759508     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00607-7     Document Type: Article

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