SiC precipitate formation during high dose carbon implantation into silicon

Materials Research Society Symposium - Proceedings

Volumn 438, Issue , 1996, Pages 289-294

  Lindner, J K N ^a   Volz, K ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CARBON; ION BEAMS; ION IMPLANTATION; IONS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

DENSITY DISTRIBUTION; HIGH DOSE CARBON IMPLANTATION; ION BEAM SYNTHESIS; PRECIPITATE FORMATION;

SEMICONDUCTING FILMS;

EID: 0030352654     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-438-289     Document Type: Conference Paper

References (17)