Mechanisms of SiC formation in the ion beam synthesis of 3C-SiC layers in silicon

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 215-218

  Lindner, J K N ^a   Reiber, W ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Buried Layers; Epitaxy; Ion Beam Synthesis; Precipitation

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION BEAMS; MONTE CARLO METHODS; PRECIPITATION (CHEMICAL); SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

BURIED LAYERS; ION BEAM SYNTHESIS;

SILICON CARBIDE;

EID: 3743148344     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.215     Document Type: Article

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