SiC precipitate formation during high dose carbon implantation into silicon

Materials Research Society Symposium - Proceedings

Volumn 439, Issue , 1997, Pages 173-178

  Lindner, J K N ^a   Volz, K ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; CARBON; CRYSTAL LATTICES; DENSITY (SPECIFIC GRAVITY); EPITAXIAL GROWTH; ION BEAMS; ION IMPLANTATION; IRRADIATION; STOICHIOMETRY; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

HIGH DOSE IMPLANTATION; ION BEAM SYNTHESIS; PRECIPITATES;

SEMICONDUCTING SILICON;

EID: 0030654045     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)