Anisotropy of inversion channel mobility in 4H- and 6H-SiC MOSFETs on (112̄0) face

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Yano, H ^a   Hirao, T ^a   Kimoto, T ^a   Matsunami, H ^a   Asano, K ^b   Sugawara, Y ^b  

^a KYOTO UNIVERSITY   (Japan)

^b KANSAI ELECTRIC POWER CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRON SCATTERING; ELECTRON TRAPS; MOSFET DEVICES; PHONONS; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

INVERSION CHANNEL MOBILITY;

SILICON CARBIDE;

EID: 0033686723     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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