A scalable single poly EEPROM cell for embedded memory applications

Microelectronics Journal

Volumn 28, Issue 6-7, 1997, Pages 657-661

  Baldi, L ^a   Cascella, A ^a   Vajana, B ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001211292     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2692(97)00001-3     Document Type: Article

References (4)

1. P. Ghezzi, C. Riva and M.G. Valentini, US Patent 5,132,239.
2. P. Ghezzi, F. Pio and C. Riva, US Patent 5,367,483.
3. Vajana, B. A high density single poly EEPROM for low cost embedded memory applications. Alta Frequenza, 7(1) (1995) 62.
4. P. Cacharelis, D. Hoffstetter, S. Schmidt, J. Nilles, J. Gough and J. Smillie, A 0.8 mm CMOS double polysilicon EEPROM technology module optimized for minimum wafer cost, Proc. 24th ESSDERC, Edinburgh, 1994, p. 195.