Novel stacked capacitor technology for 1-Gbit DRAMs with (Ba,Sr)TiO3 thin films

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 80, Issue 5, 1997, Pages 70-78

  Horikawa, Tsuyoshi ^a   Yuuki, Akimasa ^a   Shibano, Teruo ^a   Kawahara, Takaaki ^a   Makita, Tetsuro ^a   Kuroiwa, Takeharu ^a   Yamamuka, Mikio ^a   Oomori, Tatsuo ^a   Mikami, Noboru ^a   Ono, Kouichi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

(Ba,Sr)TiO3 thin film; 1 Gbit DRAM; BST film; Stacked capacitor technology; Stacked cell capacitor

Indexed keywords

CAPACITORS; CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTRODES; MORPHOLOGY; RANDOM ACCESS STORAGE; SURFACES;

LIQUID SOURCE CHEMICAL VAPOR DEPOSITION METHODS; STACKED CAPACITOR TECHNOLOGY; STACKED CELL CAPACITOR;

THIN FILMS;

EID: 0031130240     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1520-6432(199705)80:5<70::aid-ecjb10>3.0.co;2-3     Document Type: Article

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