Silicon Single-electron Memory Using Ultra-small Floating Gate

Fujitsu Scientific and Technical Journal

Volumn 34, Issue 2, 1998, Pages 142-152

  Futatsugi, Toshiro ^a,b,c   Nakajima, Anri ^b,c,d,e   Nakao, Hiroshi ^b,c,f  

^a UNIVERSITY OF TOKYO   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

^c JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

^e HIROSHIMA UNIVERSITY   (Japan)

^f TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; HYSTERESIS; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; THRESHOLD VOLTAGE; TIN;

COULOMB GAP; COULOMB STAIRCASE; FLOATING GATE; SINGLE ELECTRON MEMORY;

SEMICONDUCTOR STORAGE;

EID: 0032301878     PISSN: 00162523     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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