Distribution of gettering centres at a buried amorphous layer in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 334-339

  Kogler R ^a   Eichhorn, F ^a   Mucklich A ^a   Danilin, A B ^b   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b Cent for Analysis of Substances   (Russian Federation)

Author keywords

Cu; Defects; Gettering; Ion implantation; Si

Indexed keywords

CRYSTAL IMPURITIES; CRYSTAL LATTICES; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; DIFFUSION IN SOLIDS; GETTERS; ION IMPLANTATION; PHASE INTERFACES; STRAIN;

METAL GETTERING CENTERS;

SEMICONDUCTING SILICON;

EID: 0033513777     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00762-9     Document Type: Article

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