Impurity gettering by high-energy ion implantation in silicon beyond the projected range

Applied Physics Letters

Volumn 75, Issue 22, 1999, Pages 3467-3469

  Gueorguiev, Y M ^a,b   Kogler R ^a   Peeva, A ^a   Panknin, D ^a   Mucklich A ^a   Yankov, R A ^a,c   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b INSTITUTE OF ELECTRONICS   (Bulgaria)

^c CCR GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001577134     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125298     Document Type: Article

References (17)

1. H. Wong, N. W. Cheung, P. K. Chu, J. Liu, and J. W. Mayer, Appl. Phys. Lett. 52, 1023 (1988).
2. R. Kögler, D. Panknin, W. Skorupa, P. Werner, and A. Danilin, Proceedings of the XI International Conference Ion Implantation and Technology 96, IEEE Publ. 96TH8182, Piscataway, NJ 08854-4150.
3. A. Agarwal, K. Christiensen, D. Venables, D. M. Maher, and G. A. Rozgonyi, Appl. Phys. Lett. 69, 3899 (1996).
4. M. Tamura, T. Ando, and K. Ohyu, Nucl. Instrum. Methods Phys. Res. B 59, 572 (1991).
5. R. Kögler, R. A. Yankov, J. R. Kaschny, M. Posselt, A. B. Danilin, and W. Skorupa, Nucl. Instrum. Methods Phys. Res. B 142, 493 (1998).
6. R. A. Brown, O. Kononchuk, G. A. Rozgonyi, S. Koveshnikov, A. P. Knights, P. J. Simpson, and F. Gonzalez, J. Appl. Phys. 84, 2459 (1998).
7. R. Kögler, A. Peeva, W. Anwand, G. Brauer, W. Skorupa, P. Werner, and U. Gösele, Appl. Phys. Lett. 75, 1279 (1999).
8. M. D. Giles, J. Electrochem. Soc. 138, 1160 (1991).
9. K.-H. Heinig and H.-U. Jäger, Proceedings of the 1th ENDEASD Workshop, edited by C. Claeys, Santorini, Greece, 21-22 April 1999.
10. U. M. Gösele and T. Y. Tan, in Materials Science and Technology, edited by R. W. Cahn, P. Haasen, E. J. Kramer, and W. Schröter (VCH, Weinheim, 1991), p. 197.
11. S. M. Hu, P. M. Fahey, and R. W. Dutton, J. Appl. Phys. 54, 6912 (1983).
12. M. Orlowski, Appl. Phys. Lett. 53, 1323 (1988).
13. P. M. Fahey, P. B. Griffin, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989).
14. H. S. Chao, S. W. Crowder, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 79, 2352 (1996).
15. E. Spiecker, M. Seibt, and W. Schröter, Phys. Rev. B 55, 9577 (1997).
16. J. L. Benton, S. Libertino, P. Kringhøj, D. J. Eaglesham, J. M. Poate, and S. Coffa, J. Appl. Phys. 82, 120 (1997).
17. S. Fatima, J. Wong-Leung, J. Fitz Gerald, and C. Jagadish, Appl. Phys. Lett. 74, 1141 (1999).