Evidence for interstitial-type defects in the RP/2 region of MeV-self-ion-implanted silicon produced by standard ion milling procedure

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 161, Issue , 2000, Pages 1090-1094

  Peeva, A ^a   Kogler R ^a   Werner, P ^b   De Mattos, A A D ^c   Fichtner, P F P ^d   Behar, M ^d   Skorupa, W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b MPI fu Mikrostrukturphysik   (Germany)

^c PONTIFÍCIA UNIVERSIDADE CATÓLICA DE CAMPINAS   (Brazil)

^d FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; ION BOMBARDMENT; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT FORMATION; ION MILLING;

ION IMPLANTATION;

EID: 0038694285     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00992-1     Document Type: Article

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