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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2987-2990

X-ray radiation response of epitaxial and nonepitaxial n-6H-SiC metal-oxide-semiconductor capacitors

(5) De Vasconcelos, Elder Alpes a Da Silva Jr , Eronides Felisberto a Katsube, Teruaki b Yoshida, Sadafumi b Nishioka, Yasushiro c

a FEDERAL UNIVERSITY OF PERNAMBUCO (Brazil)

b SAITAMA UNIVERSITY (Japan)

c Texas Instruments Japan Ltd (Japan)

Author keywords

6H SiC; Interfaces; Ionizing radiation; Radiation damage; SiC devices

Indexed keywords

CAPACITANCE; ELECTRIC CHARGE MEASUREMENT; ELECTRIC POTENTIAL; ELECTRON TRAPS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); RADIATION DAMAGE; RADIATION HARDENING; SILICON CARBIDE;

INTERFACE TRAP GENERATION; LOW ENERGY X RAYS;

MOS CAPACITORS;

EID: 0035300630 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.2987 Document Type: Article

Times cited : (3)

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