Depth profile of trapped charges in oxide layer of 6H-SiC metal-oxide-semiconductor structures

Journal of Applied Physics

Volumn 80, Issue 1, 1996, Pages 282-287

  Yoshikawa, M ^a   Saitoh, K ^b   Ohshima, T ^a   Itoh, H ^a   Nashiyama, I ^a   Yoshida, S ^c   Okumura, H ^c   Takahashi, Y ^b   Ohnishi, K ^b  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b NIHON UNIVERSITY   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001723039     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362817     Document Type: Article

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