Improvement of SiO2/4H-SiC interface using high-temperature hydrogen annealing at low pressure and vacuum annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2306-2309

  Fukuda, Kenji ^a   Nagai, Kiyoko ^a   Sekigawa, Toshihiro ^a   Yoshida, Sadafumi ^a   Arai, Kazuo ^a   Yoshikawa, Masahito ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

4H SiC; H2 annealing; Interface state density; MOS; Vacuum annealing

Indexed keywords

EID: 0004620140     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2306     Document Type: Article

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