High temperature (450°C) reliable NMISFET's on p-type 6H-SiC

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 209-212

  Wang, X W ^a   Zhu, W J ^a   Guo, X ^a   Ma, T P ^a   Tucker, Jesse B ^a   Rao, Mulpuri V ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; LEAKAGE CURRENTS; RELIABILITY; SILICON CARBIDE; VAPOR DEPOSITION;

CAPACITANCE VOLTAGE CHARACTERISTICS; EQUIVALENT OXIDE THICKNESS; JET VAPOR DEPOSITION; MIS CAPACITORS; OXIDE NITRIDE OXIDE STACK GATE DIELECTRIC; POST IMPLANTATION ANNEAL; TIME DEPENDENT DIELECTRIC BREAKDOWN;

MISFET DEVICES;

EID: 0033306992     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)