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Volumn 30, Issue 3, 2001, Pages 156-161

Characterization of algan/gan structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy

(7) Kang, Sangbeom a Doolittle, W A a Lee, K K a Dai, Z R b Wang, Z L b Stock, S R b Brown, A S a

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b Georgia Institute of Technology (United States)

Author keywords

AlGaN; Atomic force microscopy; GaN; High resolution transmission electron microscopy; LiGaO2; Polarity; Rf plasma nitrogen source; Step flow growth; Surface morphology; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; GRAIN SIZE AND SHAPE; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE PROPERTIES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM GALLIUM NITRIDE; ATOMIC ARRANGEMENT; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LATTICE MISMATCH; RADIO FREQUENCY-PLASMA ASSISTED MOLECULAR BEAM EPITAXY; X RAY FULL WIDTH AT HALF MAXIMUM;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0035275476 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-001-0009-z Document Type: Article

Times cited : (4)

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