Trap Studies in GalnP/GaAs and AlGaAs/GaAs HEMT’s by Means of Low-Frequency Noise and Transconductance Dispersion Characterizations

IEEE Transactions on Electron Devices

Volumn 41, Issue 5, 1994, Pages 637-642

  Pavlidis, Dimitris ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISPERSION (WAVES); ELECTRIC CURRENTS; ELECTRIC FREQUENCY MEASUREMENT; ELECTRON ENERGY LEVELS; HETEROJUNCTIONS; LOW TEMPERATURE EFFECTS; OPTIMIZATION; OSCILLATORS (ELECTRONIC); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SIGNAL NOISE MEASUREMENT; TEMPERATURE MEASUREMENT;

CHANNEL CURRENTS; FERMI LEVEL; FREQUENCY DISPERSION MEASUREMENT; LOW FREQUENCY NOISE; TRANSCONDUCTANCE; TRANSITION FREQUENCY; TRAPS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0028427534     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.285009     Document Type: Article

References (19)

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