Analysis of capacitance and transconductance frequency dispersions in MESFETs for surface characterization

Solid State Electronics

Volumn 29, Issue 10, 1986, Pages 1087-1097

  Graffeuil, J ^a,b   Hadjoub, Z ^c   Fortea, J P ^b   Pouysegur, M ^c  

^a UNIVERSITÉ PAUL SABATIER   (France)

^b CNES   (France)

^c LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, FIELD EFFECT - ANALYSIS;

FREQUENCY DISPERSIONS; MESFET; SURFACE CHARACTERIZATION; SURFACE STATES; TRANSCONDUCTANCE;

TRANSISTORS, FIELD EFFECT;

EID: 0022795856     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(86)90110-3     Document Type: Article

References (20)

1. Analysis of electrical and optical properties of insulating film–GaAs interfaces using MESFET-type structures
2. Electrical modeling of compound semiconductor interface for FET device assessment
3. Comparative reliability study of GaAs power MESFETs: mechanisms for surface-induced degradation and a reliable solution
4. Thermal Noise in Field-Effect Transistors
5. Admittance of p-n junctions containing traps
6. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique