Low-Field Low-Frequency Dispersion of Transconductance in GaAs MESFET’s with Implications for Other Rate-Dependent Anomalies

IEEE Transactions on Electron Devices

Volumn 35, Issue 3, 1988, Pages 257-267

  Ladbrooke, Peter H ^a   Blight, Stephen R ^a  

^a Marconi Research Center   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE;

GALLIUM ARSENIDE MESFET; METAL-SEMICONDUCTOR FET (MESFET); SURFACE STATES; TRANSCONDUCTANCE DISPERSION;

TRANSISTORS, FIELD EFFECT;

EID: 0023984067     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.2449     Document Type: Article

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