The role of the device surface in the high voltage behaviour of the GaAs MESFET

Solid State Electronics

Volumn 29, Issue 8, 1986, Pages 807-813

  Barton, T M ^a   Ladbrooke, P H ^a  

^a Hirst Research Centre   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002165205     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(86)90183-8     Document Type: Article

References (18)

1. Light emission and burnout characteristics of GaAs power MESFET's
2. Gate-drain avalanche breakdown in GaAs power MESFET's
3. Power-limiting breakdown effects in GaAs MESFET's
4. Theoretical analysis of the DC avalanche breakdown in GaAs MESFET's
5. The Potential Due to a Charged Metallic Strip on a Semiconductor Surface
6. The Field Singularity at the Edge of an Electrode on a Semiconductor Surface
7. The Flat Plate Problem for a Semiconductor
8. Evidence for a superlattice at Si–SiOx interface
9. A Treatment for Boundary Singularities in Finite Difference Solutions of Laplace's Equation (Correspondence)
10. The Accuracy of Finite-Difference Solutions of Laplace's Equation