Frequency-Dependent Electrical Characteristics of GaAs MESFET’s

IEEE Transactions on Electron Devices

Volumn 37, Issue 5, 1990, Pages 1217-1227

  Golio, J Michael ^a   Miller, Monte G ^a   Maracas, George N ^b   Johnson, David A ^b  

^a MOTOROLA INC   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS; INTEGRATED CIRCUITS, MONOLITHIC--MICROWAVES; SEMICONDUCTING GALLIUM ARSENIDE;

CHANNEL-SUBSTRATE INTERFACE; S-PARAMETER MEASUREMENTS; TRANSCONDUCTANCE;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0025434757     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.108182     Document Type: Article

References (14)

1. M. A. Smith, T. S. Howard, K. J. Anderson, and A. M. Pavio, “RF nonlinear device characterization yields improved modeling accuracy,” in IEEE Microwave Theory and Techniques Symp. Dig., pp. 381–384, 1986.
2. P. Canfield, J. Medinger, and L. Forbes, “buried-channel GaAs MESFET’s with frequency-independent output conductance,” IEEE Electron Device Lett., vol. EDL-8, pp. 88–89, Mar. 1987.
3. L. E. Larson, “An improved GaAs MESFET equivalent circuit model for analog integrated circuit applications,” IEEE J. Solid-State Circuits, vol. SC-22, pp. 567–574, Aug. 1987.
4. P. H. Ladbrooke and S. R. Blight, “Low-field low-frequency dispersion of transconductance in GaAs MESFET’s with implications for other rate-dependent anomolies,” IEEE TRANS. Electron Devices, vol 35, pp. 257–267, Mar. 1988.
5. N. Scheinberg, R. Bayruns, and R. Goyal, “A low-frequency GaAs MESFET circuit model,” IEEE J. Solid-State Circuits, vol. 23, pp. 605–608, Apr. 1988.
6. A. Zylberstejn, G. Bert, and G. Nuzillat, “Hole traps and their effects in GaAs MESFETs,” in Inst. Phys. Conf. Ser. No. 45, 1979, ch. 1, pp. 315–325.
7. J. F. Wager and A. J. McCamant, “GaAs MESFET interface considerations,” IEEE Trans. Electron Devices, vol. ED-34, pp. 1001–1004, May 1987.
8. C. Camacho-Penalosa and C. S. Aitchison, “Modeling frequency dependence of output impedance of a microwave MESFET at low frequencies,” Electron. Lett., vol. 21, pp. 528–529, June 6, 1985.
9. S. R. Blight, R. H. Wallis, and H. Thomas, “Surface influence on the conductance DLTS spectra of GaAs MESFETs,” IEEE Trans. Electron Devices, vol. ED-33, pp. 1447–1453, Oct. 1986.
10. T. M. Barton and P. H. Ladbrooke, “The role of the device surface in the high voltage behavior of the GaAs MESFET,” Solid-State Electron., vol. 29, pp. 807–813, Aug. 1986.
11. S. Dhar, P. K. Bhattacharya, F-Y. Juang, W-P. Hong, and R. A. Sadler, “Dependence of deep-level parameters in ion-implanted GaAs MESFET’s on material preparation,” IEEE Trans. Electron Devices, vol. ED-33, pp. 111–118, Jan. 1986.
12. L. Forbes and C. T. Sah, “Application of the distributed equilibrium equivalent circuit model to semiconductor junctions,” IEEE Trans. Electron Devices, vol. ED-16. pp. 1036–1041, Dec. 1969.
13. M. Weiss and D. Pavlidis, “Power optimization of GaAs implanted FET’s based on large-signal modeling,” IEEE Trans. Microwave Theory Tech., vol. MTT-35, pp. 175–188, Feb. 1987.
14. N. Ishihara, H. Kikuchi, and M. Ohara, “Gigahertz-band high-gain GaAs monolithic amplifiers using parallel feedback techniques,” IEEE J. Solid-State Circuits, vol. 24, pp. 962–968, Aug. 1989.