Electron traps in bulk and epitaxial gaas crystals

Electronics Letters

Volumn 13, Issue 7, 1977, Pages 191-193

  Martin, G M ^a   Mitonneau, A ^a   Mircea, A ^a  

^a PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

Electron traps; Gallium arsenide; III V semiconductors

Indexed keywords

CRYSTALS;

GALLIUM ARSENIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0017468922     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19770140     Document Type: Article

References (20)

1. LANG, D. V.: ‘Deep level transient spectroscopy: a new method to characterize traps in semiconductors’, J. Appl. Phys., 1974, 45, pp. 3023-3033
2. HENRY, C. H., and LANG, D. V.: ‘Nonradiative capture and recombination by multiphonon emission in GaAs and GaP’, Phys. Rev. B (to be published)
3. MIRCEA, A., MITONNEAU, A., and VANNIMENUS, J.: ‘Temperature dependence of ionization energies of deep bound states in semiconductors’, J. Physique (Lettres) (to be published)
4. MIRCEA, A., MITONNEAU, A., HOLLAN, L., and BRIERE, A.: ‘Out diffusion of deep electron traps in epitaxial GaAs’, Appl. Phys., 1976, 11, pp. 153-158
5. xAs alloys’ (submitted for publication)
6. MIRCEA, A.: ‘Characterisation of a noise-generating trap in vapour-deposited n-type epitaxial GaAs for transferred-electron devices’. Proceedings of 4th conference on noise in solid state devices (Noor-dwijkerhout, 1975).
7. HURLE, D. J.: ‘Impurity point defect complexes in GaAs’. To be published in Proceedings of 6th international conference on GaAs and related compounds (Edinburgh, Sept 1976)
8. STOCKER, H. J., and SCHMIDT, M.: ‘Photoluminescence of the Cr acceptor in boat-grown and LPE GaAs’, J. Appl. Phys., 1976, 47, pp. 2450-2451
9. ASHBY, A., ROBERTS, G. G., ASHEN, D. J., and MULLIN, J. B.: ‘Non extrinsic conduction in semi-insulating GaAs’, Solid State Commun. 1976, 20, pp. 61-63
10. WHITE, A. M., PORTEOUS, P., and DEAN, P. J.: ‘Deep traps in GaAs revealed at high resolution by simple fast capacitance method’, J. Electron. Mat., 1976, 5, pp. 91-107
11. LANG, D. V., and KIMERLING, L. C.: ‘A new technique for defect spectroscopy in semiconductors: application to 1-MeV electron irradiated n-GaAs’ in Lattice defects in semiconductors (Institute of Physics, London, 1974,) pp. 581-588
12. HASEGAWA, F., and MAJERFELD, A.: ‘Majority carrier traps in n-and p-type epitaxial GaAs’, Electron. Lett., 1975, 11, pp. 286-289
13. SAKAI, K., and IKOMA, T.: ‘Deep levels in GaAs by capacitance methods’, Appl. Phys., 1974, 5, pp. 165-171
14. CHERN, I., HUANG, and SCHENG, S. Li.: ‘Analyses of transient capacitance experiments for Au-GaAs Schottky diodes in the presence of deep impurities and the interfacial layer’, Solid-State Electron., 1973, 16, pp. 1481-1486
15. LANG, D. V., and LOGAN, R. A.: ‘A study of deep levels in GaAs by capacitance spectroscopy’, J. Electron. Mat., 1975, 4, pp. 1053-1066
16. LANG, D. V., CHO, A. Y., GOSSARD, A. C., ILEGEMS, M., and WIEGMANN, W.: ‘Study of electron traps in n-GaAs grown by molecular beam epitaxy’, J. Appl. Phys., 1976, 47, pp. 2558-2564
17. MIRCEA, A., and MITONNEAU, A.: ‘A study of electron traps in vapour-phase epitaxial GaAs’, Appl. Phys., 1975, 8, pp. 15-21
18. LIN, A. L., and BUBE, R. H.: ‘Photoelectronic properties of high-resistivity GaAs: Cr’, J. Appl. Phys., 1976, 47, pp. 1859-1867
19. LEFEVRE, H., and SCHULZ, M.: ‘Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductors’, Appl. Phys., 1977, 12, pp. 45-53
20. THEETEN, J. B., HOLLAN, L., and CADORET, R.: ‘Growth mechanisms in C.V.D. of GaAs’, J. Cryst. Growth. (to be published)