ANALYSIS OF ELECTRICAL AND OPTICAL PROPERTIES OF INSULATINGFILM-GAAS INTERFACES USING MESFET-TYPE STRUCTURES.

J VAC SCI TECHNOL

Volumn V 21, Issue N 2, 1982, Pages 438-441

  OZEKI, M ^a   KODAMA, K ^a   TAKIKAWA, M ^a   SHIBATOMI, A ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; INTERFACE STATES; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE;

TRANSISTORS, FIELD EFFECT;

EID: 0020159554     PISSN: 00225355     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.571673     Document Type: Conference Paper

References (6)