Modeling the Effects of Surface States on DLTS Spectra of GaAs MESFET’s

IEEE Transactions on Electron Devices

Volumn 37, Issue 5, 1990, Pages 1235-1244

  Zhao, Jian H ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE--CHARGE CARRIERS; SPECTROSCOPIC ANALYSIS;

DEEP TRAPS; DEEP-LEVEL TRANSIENT SPECTROSCOPY; HOLELIKE SIGNALS; SURFACE STATES;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0025431836     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.108184     Document Type: Article

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