GaN 20-mm diameter ingots grown from melt-solution by seeded technique

Materials Research Society Symposium - Proceedings

Volumn 595, Issue , 2000, Pages

  Sukhoveyev, V A ^a   Ivantsov, V A ^a   Nikitina, I P ^a   Babanin, A I ^a   Polyakov, A Y ^a   Govorkov, A V ^a   Smirnov, N B ^a   Mil'vidskii, M G ^a   Dmitriev, V A ^a  

^a Crystal Growth Research Center   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH FROM MELT; CRYSTAL STRUCTURE; POLYCRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; THERMAL EFFECTS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 17144441156     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)