Growth of GaN Single Crystals under High Nitrogen Pressures and their Characterization

Crystal Research and Technology

Volumn 34, Issue 5, 1999, Pages 785-795

  Krukowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

Crystal growth; GaN; Growth habit; Optical properties; Surface preparation; Thermodynamics

Indexed keywords

EID: 0001725185     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-4079(199906)34:5/6<785::AID-CRAT785>3.0.CO;2-H     Document Type: Article

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