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Applied Physics A: Materials Science and Processing

Volumn 73, Issue 1, 2001, Pages 1-9

Effect of self-assembled Ge nanostructures on Si surface electronic properties

(3) Kamins, T I a Nauka, K a Williams, R S a

a HEWLETT PACKARD LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; DEFECTS; ELECTRON DEVICES; ELECTRONIC PROPERTIES; GERMANIUM; LITHOGRAPHY; SILICON; SPECTROSCOPIC ANALYSIS; SURFACE PROPERTIES;

BAND DISCONTINUITIES; SCANNING TUNNELING SPECTROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 0034974158 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s003390100782 Document Type: Article

Times cited : (5)

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