Electronic states of thin epitaxial layers of Ge on Si(100)

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 738-741

  Di Gaspare, L ^a   Capellini, G ^a   Cianci, E ^a   Evangelisti, F ^a  

^a ROMA TRE UNIVERSITY   (Italy)

Author keywords

Chemical vapor deposition; Photoemission spectroscopies; Strained heterojunctions; Valence band offset

Indexed keywords

BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; CRYSTAL LATTICES; ELECTRONIC DENSITY OF STATES; EPITAXIAL GROWTH; PHOTOEMISSION; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS;

VALENCE BAND OFFSET; YIELD SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 0031685893     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00557-6     Document Type: Article

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