Carrier concentration dependence of the scanning capacitance microscopy signal in the vicinity of p-n junctions

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 1, 2000, Pages 409-413

  Kopanski, J J ^a   Marchiando, J F ^a   Rennex, B G ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ATOMIC FORCE MICROSCOPY; CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; COMPUTER SIMULATION; MATHEMATICAL MODELS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

POISSON EQUATION; SCANNING CAPACITANCE MICROSCOPY (SCM);

SEMICONDUCTOR JUNCTIONS;

EID: 0033697212     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591243     Document Type: Article

References (15)

1. J. J. Kopanski, J. F. Marchinado, D. W. Berning, R. Alvis, and H. E. Smith, J. Vac. Sci. Technol. B 16, 339 (1998).
2. J. S. McMurray, J. Kim, C. C. Williams, and J. Slinkman, J. Vac. Sci. Technol. B 16, 344 (1998).
3. G. M. Yu, P. B. Griffin, and J. D. Plummer, Tech. Dig. Int. Electron Devices Meet. 717 (1998).
4. Scanning Capacitance Microscopy, Support Note No. 224, Rev. B, Digital Instruments Inc., 520 E. Montecito St., Santa Barbara, CA (1996).
5. V. A. Ukraintsev, F. R. Potts, R. M. Wallace, L. K. Magel, H. Edwards, and M.-C. Chang, in Characterization and Metrology for ULSI Technology, AIP Conf. Proc. No. 449, edited by D. G. Seiler, A. C. Diebold, W. M. Bullis, T. J. Shaffner, R. McDonald, and E. J. Walters (AIP, Woodbury, NY, 1998), pp. 736-740.
6. J. J. Kopanski, J. F. Marchiando, and J. R. Lowney, in Semiconductor Characterization: Present Status and Future Needs, edited by W. M. Bullis, D. G. Seiler, and A. C. Diebold (AIP, Woodbury, NY, 1996), pp. 308-312.
7. R. E. Bank, PLTMG: A Software Program for Solving Elliptic Partial Differential Equations, Users' Guide 8.0 (SIAM, Philadelphia, 1998).
8. J. F. Marchinado, J. J. Kopanski, and J. R. Lowney, J. Vac. Sci. Technol. B 16, 463 (1998).
9. J. S. McMurray and C. C. Williams, in Ref. 5, pp. 731-735.
10. J. F. Marchiando, J. J. Kopanski, and J. Albers, J. Vac. Sci. Technol. B, these proceedings.
11. A. S. Grove, Physics and Technology of Semiconductor Devices (Wiley, New York, 1967), pp. 149-207.
12. J. J. Kopanski, J. F. Marchiando, J. Albers, and B. G. Rennex, in Ref. 5, pp. 725-729.
13. W. Timp, M. O'Malley, J. Garno, R. Kleiman, and G. Timp, Tech. Dig. Int. Electron Devices Meet. 691 (1998).
14. M. L. O'Malley, G. L. Timp, S. V. Moccio, J. P. Garno, and R. N. Kleiman, Appl. Phys. Lett. 74, 3672 (1999).
15. H. Edwards, R. McGlothlin, R. S. Martin, E. U. M. Gribelyuk, R. Mahaffy, C. K. Shih, R. S. List, and V. A. Ukraintsev, Appl. Phys. Lett. 72, 698 (1998).