Process optimization for sub-100 nm gate patterns using phase edge lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4345, Issue 1, 2001, Pages 200-210

  Schenau, Koen van Ingen ^a   Vleeming, Bert ^a   Ansem, Wendy Gehoel van ^a   Wong, Patrick ^a   Vandenberghe, Geert ^b  

^a ASML   (Netherlands)

^b IMEC   (Belgium)

Author keywords

Alternating PSM; Isofocal; Pattern collapse; Photoresist

Indexed keywords

ASPECT RATIO; GATES (TRANSISTOR); MASKS; OPTIMIZATION; PATTERN RECOGNITION;

GATE PATTERNS;

PHOTORESISTS;

EID: 0034768177     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.436849     Document Type: Article

References (19)

1. Improving resolution with a phase-shifting mask
2. The application of alternating phase-shifting masks to 140nm gate patterning; Line width control improvements and design optimisation
3. Extension of KrF technology to sub-50nm pattern formation
4. Chromeless phase-shift masks used for sub-100nm SOI CMOS transistors
5. Practicing extension of 248 DUV optical lithography using trim-mask PSM
6. Status of ArF technology for the 130nm node
7. Pattern collapse in high aspect ratio DUV and 193nm resist
8. Prevention of resist pattern collapse by resist heating during rinsing
9. Mechanism of resist pattern collapse
10. Alt-PSM for 0.10um and 0.13um poly patterning
11. Method for expanding process window for the double exposure technique with alt-PSMs
12. Basic imaging characteristics of phase edge lithography and impact of lens aberrations on these
13. Process capability analysis of DUV alternating PSM and DUV attenuated PSM lithography for 100nm gate fabrication
14. Effect of phase shift masks on across field linewidth control
15. Considerations for the use of application-specific photoresists
16. Examination of the relationships between photoresist dissolution and diffusion characteristics, lithographic predictors, and simulated lithographic performance
17. A practical technology path to sub-0.10 micron process generations via enhanced optical lithography
18. Proximity effects of alternating phase shift masks