Optically detected magnetic resonance studies of non-radiative recombination centres in 6H SiC

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 599-602

  Son, N T ^a   Wagner, Mt ^a   Sorman E ^a   Chen, W M ^a   Monemar, B ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Non Radiative Recombination Centres; Optically Detected Magnetic Resonance; SiC

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; CRYSTAL SYMMETRY; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

ELECTRON NUCLEAR DOUBLE RESONANCE (ENDOR) SPECTROSCOPY; OPTICALLY DETECTED MAGNETIC RESONANCE (ODMR) SPECTROSCOPY;

SILICON CARBIDE;

EID: 3743072633     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.599     Document Type: Article

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