An EPR study of defects induced in 6H-SiC by ion implantation

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 137-143

  Barklie, R C ^a   Collins, M ^a   Holm, B ^a   Pacaud, Y ^b   Skorupa, W ^b  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

6H SiC; Defects; Electron paramagnetic resonance; Ion implantation

Indexed keywords

EID: 0000858484     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0140-6     Document Type: Article

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